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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=625mW. B KTC3245 EPITAXIAL PLANAR NPN TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 400 350 6 300 625 150 -55 150 UNIT V D H V V mA mW L F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (1) Collector-Emitter Breakdown Voltage (2) Emitter-Base Breakdown Voltage Collector Cut off Current Collector Cut off Current Emitter Cutoff Current ) TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IC=100 A, IB=0 IE=10 A, IC=0 VCB=320V, IE=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA MIN. 400 350 400 6.0 40 50 45 40 TYP. MAX. 100 500 100 200 0.5 0.75 V V UNIT V V V V nA nA nA SYMBOL V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO ICES IEBO DC Current Gain * hFE VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * VCE(sat) VBE(sat) IC=10mA, IB=1mA IC=10mA, IB=1mA * Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% 2000. 8. 23 Revision No : 0 1/3 KTC3245 h FE - I C 200 180 DC CURRENT GAIN h FE 160 140 120 100 80 60 40 20 0 1 10 100 1k 10k COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =10V TURN-ON SWITCHING CHARACTERISTICS 10 5 3 TIME t (S) V CC =150V I C /I B =10 Ta=25 C V BE (OFF)=4V 1 0.5 0.3 td tr 0.1 1 3 10 30 100 COLLECTOR CURRENT I C (mA) TURN-OFF SWITCHING CHARACTERISTICS 100 50 30 TIME t (S) 10 5 3 1 0.5 0.3 0.1 1 3 10 30 100 COLLECTOR CURRENT I C (mA) tf ts C ib , C ob - V CB 1k CAPACITANCE C ib (pF), Cob (pF) 500 300 100 50 30 10 5 3 1 0.1 1 10 100 1k COLLECTOR-BASE VOLTAGE VCB (V) C ib Ta=25 C f=1MHz VCC =150V I C /I B =10 Ta=25 C C ob 1.0 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 0.8 0.6 0.4 0.2 0 0.1 COLLECTOR EMITTER VOLTAGE VCE (V) V BE(sat) , V CE(sat) - I C Ta=25 C VBE(sat) @I C /I B =10 COLLECTOR SATURATION REGION 0.5 0.4 0.3 0.2 0.1 0 10 100 1k 10k 100k BASE CURRENT I B (A) Ta=25 C I C =1mA I C =10mA I C =50mA VBE(on) @VCE =10V V CE(sat) @I C /IB =10 1 10 100 1k COLLECTOR CURRENT I C (mA) 2000. 8. 23 Revision No : 0 2/3 KTC3245 h FE - I C SMALL SIGNAL CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 30 10 3 1 0.3 0.1 VCE =10V f=10MHz Ta=25 C SAFE OPERATING AREA 100k 3k 1k 300 100 30 10 3 1 1 3 10 30 100 300 1k 3k 10k COLLECTOR-EMITTER VOLTAGE VCE (V) Ta =2 5 C 1ms 100s 1s Valld for Duty < 10% Tc =2 5 C 0.1 1 10 100 1k COLLECTOR CURRENT I C (mA) 2000. 8. 23 Revision No : 0 3/3 |
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